Optical properties of composite structure based on ZnO microneedles and Alq3 thin film

نویسندگان

چکیده

The composite material based on ZnO microneedles and Alq3 thin film has been obtained. photoluminescence study shows a tenfold enhancement in the band-edge UV emission (390 nm) of 2 × visible hybrid composite, when excited by 266 nm laser beam. This can be explained interaction between molecules energy transfer from to molecule. Discussed structures find interesting applications as emitting layers OLED devices.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Correlation between crystal structure and optical properties of copper- doped ZnO thin films

ZnO and Cu doped[1] (CZO) thin films were prepared by radio frequency sputtering. The structural and optical properties of thin films were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), optical spectrophotometer, and photoluminescence (PL) techniques. ZnO thin films showed crystalline and micro-stress defects in the crystal lattice. Annealing of CZO thin films increa...

متن کامل

Simulation study of optical transmission properties of ZnO thin film deposited on different substrates

ZnO is an important II-VI semiconductor material for devices with possible applications such as piezoelectric transducers, gas sensors, transparent electronic in solar cell, saw devices. Based on known research, ZnO is the most promising in optoelectronic and optical applications, especially in UV region. An understanding of the optical properties of ZnO thin film on different substrates is als...

متن کامل

ZnO-based transparent thin-film transistors

Highly transparent ZnO-based thin-film transistors ~TFTs! are fabricated with optical transmission ~including substrate! of ;75% in the visible portion of the electromagnetic spectrum. Current– voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ;10. Threshold voltages and channel mobilities of de...

متن کامل

Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film

A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700°C exhibits not only high optical transmittan...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Optical and Quantum Electronics

سال: 2021

ISSN: ['1572-817X', '0306-8919']

DOI: https://doi.org/10.1007/s11082-021-03292-1